Navigation Links
Ultrathin alternative to silicon for future electronics
Date:11/22/2010

There's good news in the search for the next generation of semiconductors. Researchers with the U.S. Department of Energy's Lawrence Berkeley National Laboratory (Berkeley Lab) and the University of California (UC) Berkeley, have successfully integrated ultra-thin layers of the semiconductor indium arsenide onto a silicon substrate to create a nanoscale transistor with excellent electronic properties. A member of the IIIV family of semiconductors, indium arsenide offers several advantages as an alternative to silicon including superior electron mobility and velocity, which makes it an oustanding candidate for future low-power, high-speed electronic devices.

"We've shown a simple route for the heterogeneous integration of indium arsenide layers down to a thickness of 10 nanometers on silicon substrates," says Ali Javey, a faculty scientist in Berkeley Lab's Materials Sciences Division and a professor of electrical engineering and computer science at UC Berkeley, who led this research.

"The devices we subsequently fabricated were shown to operate near the projected performance limits of III-V devices with minimal leakage current. Our devices also exhibited superior performance in terms of current density and transconductance as compared to silicon transistors of similar dimensions."

For all its wondrous electronic properties, silicon has limitations that have prompted an intense search for alternative semiconductors to be used in future devices. Javey and his research group have focused on compound IIIV semiconductors, which feature superb electron transport properties. The challenge has been to find a way of plugging these compound semiconductors into the well- established, low-cost processing technology used to produce today's silicon-based devices. Given the large lattice mismatch between silicon and III-V compound semiconductors, direct hetero-epitaxial growth of III-V on silicon substrates is challenging and complex, and often results in a high volume of defects.

"We've demonstrated what we are calling an 'XOI,' or compound semiconductor-on-insulator technology platform, that is parallel to today's 'SOI,' or silicon-on-insulator platform," says Javey. "Using an epitaxial transfer method, we transferred ultrathin layers of single-crystal indium- arsenide on silicon/silica substrates, then fabricated devices using conventional processing techniques in order to characterize the XOI material and device properties."

The results of this research have been published in the journal Nature, in a paper titled, "Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors." Co-authoring the report with Javey were Hyunhyub Ko, Kuniharu Takei, Rehan Kapadia, Steven Chuang, Hui Fang, Paul Leu, Kartik Ganapathi, Elena Plis, Ha Sul Kim, Szu-Ying Chen, Morten Madsen, Alexandra Ford, Yu-Lun Chueh, Sanjay Krishna and Sayeef Salahuddin.

To make their XOI platforms, Javey and his collaborators grew single-crystal indium arsenide thin films (10 to 100 nanometers thick) on a preliminary source substrate then lithographically patterned the films into ordered arrays of nanoribbons. After being removed from the source substrate through a selective wet-etching of an underlying sacrificial layer, the nanoribbon arrays were transferred to the silicon/silica substrate via a stamping process.

Javey attributed the excellent electronic performance of the XOI transistors to the small dimensions of the active "X" layer and the critical role played by quantum confinement, which served to tune the material's band structure and transport properties. Although he and his group only used indium arsenide as their compound semiconductor, the technology should readily accommodate other compound III/V semiconductors as well.

"Future research on the scalability of our process for 8-inch and 12-inch wafer processing is needed," Javey said.

"Moving forward we believe that the XOI substrates can be obtained through a wafer bonding process, but our technique should make it possible to fabricate both p- and n- type transistors on the same chip for complementary electronics based on optimal IIIV semiconductors.

"Furthermore, this concept can be used to directly integrate high performance photodiodes, lasers, and light emitting diodes on conventional silicon substrates. Uniquely, this technique could enable us to study the basic material properties of inorganic semiconductors when the thickness is scaled down to only a few atomic layers."


'/>"/>

Contact: Lynn Yarris
lcyarris@lbl.gov
510-486-5375
DOE/Lawrence Berkeley National Laboratory
Source:Eurekalert  

Related biology technology :

1. Alfacell Hires Advisors to Advance Strategic Alternatives
2. CPC of America, Inc. to Explore Strategic Alternatives; Appoints FTI Capital Advisors to Assess Potential Opportunities
3. Verenium Corporation to Speak at the Credit Suisse Alternative Energy Conference
4. ZhenSpa.com provides Spa Enthusiasts Affordable Alternatives for Expensive Spa Treatments
5. New uses for imidazolium salts in medicine and alternative energy
6. N-Viro Fuel Technology Receives Alternative Energy Status From the U.S. Environmental Protection Agency
7. XTENT to Retain Investment Bank to Pursue Strategic Alternatives
8. XTL Biopharmaceuticals Provides Update on Potential Strategic Alternatives
9. Quest PharmaTech Announces a Review of Strategic Alternatives to Enhance Shareholder Value
10. Secretropin(R) - Effective, Preferable, Affordable as an Alternative to Injectable Growth Hormone - Gains Momentum
11. CTI Seeks Strategic Alternative for Italian Facility
Post Your Comments:
*Name:
*Comment:
*Email:
Related Image:
Ultrathin alternative to silicon for future electronics
(Date:5/26/2016)... Despite the volatility that continues to ... Today,s pre-market research on ActiveWallSt.com directs the investor community,s focus ... RDUS ), Cerus Corp. (NASDAQ: CERS ), ... Prime Therapeutics Inc. (NASDAQ: FPRX ). Register with ... http://www.activewallst.com/ On Wednesday, shares in ...
(Date:5/25/2016)... ... May 25, 2016 , ... Lajollacooks4u has become a rising hotspot ... rated one of its top attractions. Fortune 500 companies, such as Illumina, Hewlett-Packard, ... unique and intimate team-building experience. , Each event kicks off with an olive oil ...
(Date:5/25/2016)... ... May 25, 2016 , ... The American Medical Informatics ... of the National Coordinator for Health IT (ONC) outlining a measurement approach to ... were available when and where it was needed. The organization of health informatics ...
(Date:5/25/2016)... New Haven, Connecticut (PRWEB) , ... May 25, ... ... today that the U.S. Food and Drug Administration (FDA) has granted the company’s ... This is the company’s second orphan drug designation granted by the FDA. ...
Breaking Biology Technology:
(Date:4/15/2016)... 15, 2016 Research and ... Biometrics Market 2016-2020,"  report to their offering.  , ... , ,The global gait biometrics market is expected ... the period 2016-2020. Gait analysis generates ... be used to compute factors that are not ...
(Date:3/31/2016)... , March 31, 2016 ... ) ("LegacyXChange" or the "Company") LegacyXChange is ... users of its soon to be launched online site ... https://www.youtube.com/channel/UCyTLBzmZogV1y2D6bDkBX5g ) will also provide potential shareholders ... of DNA technology to an industry that is notorious ...
(Date:3/23/2016)... 23, 2016 ... Gesichts- und Stimmerkennung mit Passwörtern     ... MESG ), ein führender Anbieter digitaler ... mit SpeechPro zusammenarbeitet, um erstmals dessen Biometrietechnologie ... die Möglichkeit angeboten, im Rahmen mobiler Apps ...
Breaking Biology News(10 mins):