In semiconductors, a different measure, mobility, is used to quantify how fast electrons move. The limit to mobility of electrons in graphene is set by thermal vibration of the atoms and is about 200,000 cm2/Vs at room temperature, compared to about 1,400 cm2/Vs in silicon, and 77,000 cm2/Vs in indium antimonide, the highest mobility conventional semiconductor known.
"Interestingly, in semiconducting carbon nanotubes, which may be thought of as graphene rolled into a cylinder, we've shown that the mobility at room temperature is over 100,000 cm2/Vs" said Fuhrer (T. Drkop, S. A. Getty, Enrique Cobas, and M. S. Fuhrer, Nano Letters 4, 35 (2004)).
Mobility determines the speed at which an electronic device (for instance, a field-effect transistor, which forms the basis of modern computer chips) can turn on and off. The very high mobility makes graphene promising for applications in which transistors much switch extremely fast, such as in processing extremely high frequency signals.
Mobility can also be expressed as the conductivity of a material per electronic charge carrier, and so high mobility is also advantageous for chemical or bio-chemical sensing applications in which a charge signal from, for instance, a molecule adsorbed on the device, is translated into an electrical signal by changing the conductivity of the device.
Graphene is therefore a very promising material for chemical and bio-chemical sensing applications. The low resitivity and extremely thin nature of graphene also promises applications in thin, mechanically tough, electrically conducting, transparent films. Such films are sorely needed in a variety of elect
|Contact: Lee Tune|
University of Maryland