The UD research group made international headlines as the first to demonstrate spin transport in silicon using a novel hot-electron detection technique.
Appelbaum's research group then showed how their device design could be used as a spin field-effect transistor. The design was featured on the cover of the scientific journal Applied Physics Letters in June 2007.
More recently, Appelbaum and his team showed that an electron's spin can be transported a marathon distance in the world of microelectronics--through a 350-micron-thick silicon wafer. That major advance was reported in the Oct. 26, 2007, issue of Physical Review Letters, published by the American Physical Society.
The former research was funded by grants from the U.S. Office of Naval Research and the Defense Advanced Research Projects Agency (DARPA) of the U.S. Department of Defense.
Now, with NSF's support, Appelbaum and his group will continue to explore the fundamental development of the silicon chips, transistors and integrated circuits required for a potential new industry. Ultimately, the research may lead to the development of a whole new logic architecture for electronics, Appelbaum says.
While almost all work in the field has focused on compound semiconductors, there are clear benefits from leveraging the enormous existing capital investment in silicon, Appelbaum says. Furthermore, silicon has an intrinsically long spin lifetime, making it even more attractive for applications where spins must survive through many clock cycles and across complex circuits, he says.
A complementary education component to the research project will include the training of graduate students and under-represented undergraduates in diverse aspects of science and engineering, including semiconductor device design, processing and measurement, and spintronics.
Also, research fellowships for minority undergraduate stude
|Contact: Tracey Bryant|
University of Delaware