Navigation Links
Single-step technique produces both p-type and n-type doping for future graphene devices
Date:2/11/2010

A simple one-step process that produces both n-type and p-type doping of large-area graphene surfaces could facilitate use of the promising material for future electronic devices. The doping technique can also be used to increase conductivity in graphene nanoribbons used for interconnects.

By applying a commercially-available spin-on-glass (SOG) material to graphene and then exposing it to electron-beam radiation, researchers at the Georgia Institute of Technology created both types of doping by simply varying the exposure time. Higher levels of e-beam energy produced p-type areas, while lower levels produced n-type areas.

The technique was used to fabricate high-resolution p-n junctions. When properly passivated, the doping created by the SOG is expected to remain indefinitely in the graphene sheets studied by the researchers.

"This is an enabling step toward making possible complementary metal oxide graphene transistors," said Raghunath Murali, a senior research engineer in Georgia Tech's Nanotechnology Research Center.

A paper describing the technique appears this week in the journal Applied Physics Letters. The research was supported by the Semiconductor Research Corporation and the Defense Advanced Research Projects Agency (DARPA) through the Interconnect Focus Center.

In the new doping process, Murali and graduate student Kevin Brenner begin by removing flakes of graphene one to four layers thick from a block of graphite. They place the material onto a surface of oxidized silicon, then fabricate a four-point contact device.

Next, they spin on films of hydrogen silsesquoxane (HSQ), then cure certain portions of the resulting thin film using electron beam radiation. The technique provides precise control over the amount of radiation and where it is applied to the graphene, with higher levels of energy corresponding to more cross-linking of the HSQ.

"We gave varying doses of electron-beam radiation and then studied how it influenced the properties of carriers in the graphene lattice," Murali said. "The e-beam gave us a fine range of control that could be valuable for fabricating nanoscale devices. We can use an electron beam with a diameter of four or five nanometers that allows very precise doping patterns."

Electronic measurements showed that a graphene p-n junction created by the new technique had large energy separations, indicating strong doping effects, he added.

Researchers elsewhere have demonstrated graphene doping using a variety of processes including soaking the material in various solutions and exposing it to a variety of gases. The Georgia Tech process is believed to be the first to provide both electron and hole doping from a single dopant material.

Doping processes used for graphene are likely to be significantly different from those established for silicon use, Murali said. In silicon, the doping step substitutes atoms of a different material for silicon atoms in the material's lattice.

In the new single-step process for graphene, the doping is believed to introduce atoms of hydrogen and oxygen in the vicinity of the carbon lattice. The oxygen and hydrogen don't replace carbon atoms, but instead occupy locations atop the lattice structure.

"Energy applied to the SOG breaks chemical bonds and releases hydrogen and oxygen which bond with the carbon lattice," Murali said. "A high e-beam energy converts the whole SOG structure to more of a network, and then you have more oxygen than hydrogen, resulting in a p-type doping."

In volume manufacturing, the electron beam radiation would likely be replaced by a conventional lithography process, Murali said. Varying the reflectance or transmission of the mask set would control the amount of radiation reaching the SOG, and that would determine whether n-type or p-type areas are created.

"Making everything in a single step would avoid some of the expensive lithography steps," he said. "Gray-scale lithography would allow fine control of doping across the entire surface of the wafer."

For doping bulk areas such as interconnects that do not require patterning, the researchers simply coat the area with HSQ and expose it to a plasma source. The technique can make the nanoribbons up to 10 times more conductive than untreated graphene.

Because HSQ is already familiar to the microelectronics industry, the one-step approach to doping could help integrate graphene into existing processes, avoiding a disruption of the massive semiconductor design and fabrication system, Murali noted.

Over the past two years, researchers in the Nanotechnology Research Center had observed changes caused by application of HSQ during electrical testing. Only recently did they take a closer look at what was happening to understand how to take advantage of the phenomenon.

For the future, they'd like to better understand how the process works and whether other polymers might provide better results.

"We need to have a better understanding of how to control this process because variability is one of the issues that must be controlled to make manufacturing feasible," Murali explained. "We are trying to identify other polymers that may provide better control or stronger doping levels."


'/>"/>

Contact: John Toon
jtoon@gatech.edu
404-894-6986
Georgia Institute of Technology Research News
Source:Eurekalert  

Related biology technology :

1. New lab-on-a-chip technique developed at U of T
2. Leading Cardiovascular Surgeons Gather from Around the World to Share Ross Procedure Survival Data, Techniques at 2nd Annual Summit
3. Graphitic memory techniques advance at Rice
4. Single-molecule technique captures calcium sensor calmodulin in action
5. New MRI technique could mean fewer breast biopsies in high-risk women
6. New statistical technique improves precision of nanotechnology data
7. Five Cord Blood Transplant Centers in Catalonia and Valencia Join a Study to Test a New Technique to Treat Leukemia and Lymphoma
8. Secret of sandcastle construction could help revive ancient building technique, researchers say
9. Quest Diagnostics to Present Genomic Studies Related to New Testing Techniques for Leukemia and Prostate Cancer at 2009 ASCO Meeting
10. Gender-Selection Technique Embraced for Hopeful Parents
11. Novel CU-Boulder technique shrinks size of nanotechnology circuitry
Post Your Comments:
*Name:
*Comment:
*Email:
Related Image:
Single-step technique produces both p-type and n-type doping for future graphene devices
(Date:5/3/2016)... ... May 03, 2016 , ... Leading CEOs from biotech, ... 31st and June 1st at The Four Seasons Hotel Boston. , The Boston ... sciences, offering exclusive access to key decision makers who influence deal making and ...
(Date:5/3/2016)... THE WOODLANDS, Texas , May 3, 2016 /PRNewswire/ ... board certified plastic surgeon in The Woodlands, ... technology that destroys 24 percent of treated fat cells ... men and woman. Close to 90 percent of Americans ... effective treatment options. Nonsurgical fat reduction procedures are a ...
(Date:5/2/2016)... ... ... StarNet Communications Corp, ( http://www.starnet.com/ ) a leading publisher of remote Linux ... to its flagship X-Win32 PC X server. The new modules enable X-Win32 to ... over encrypted SSH. , Traditionally, users of PC X servers deploy the XDMCP protocol ...
(Date:4/29/2016)... April 29, 2016 According ... Market Research "Separation Systems for Commercial Biotechnology Market ... and Forecast 2015 - 2023", the separation systems ... 10,665.5 Mn in 2014 and is projected to ... to 2023 to reach US$ 19,227.8 Mn in ...
Breaking Biology Technology:
(Date:3/14/2016)... , March 14, 2016 NXTD ) ... mobile commerce market, announces the airing of a new series ... the week of March 21 st .  The commercials will ... its popular Squawk on the Street show. --> ... the growing mobile commerce market, announces the airing of a ...
(Date:3/10/2016)... Pa. , March 10, 2016   Unisys Corporation ... Customs and Border Protection (CBP) is testing its biometric ... San Diego to help identify certain non-U.S. ... . The test, designed to help determine the efficiency ... environment, began in February and will run until May 2016. ...
(Date:3/3/2016)... -- FlexTech, a SEMI Strategic Association Partner, awarded five FLEXI ... Leadership in Education, and, in a category new this ... year of the FLEXI Awards and the winners join ... past years . Judging was done on a set ... by a panel of non-affiliated, independent, industry experts. ...
Breaking Biology News(10 mins):