"Our team used a mature silicon-germanium technology IBM's 0.5 micron SiGe technology that was not intended to withstand deep-space conditions," Cressler said. "Without changing the composition of the underlying silicon-germanium transistors, we leveraged SiGe's natural merits to develop new circuit designs as well as new approaches to packaging the final circuits to produce an electronic system that could reliably withstand the extreme conditions of space."
At the end of the project, the researchers supplied NASA with a suite of modeling tools, circuit designs, packaging technologies and system/subsystem designs, along with guidelines for qualifying those parts for use in space. In addition, the team furnished NASA with a functional prototype called a silicon-germanium remote electronics unit (REU) 16-channel general purpose sensor interface. The device was fabricated using silicon-germanium microchips and has been tested successfully in simulated space environments.
A New Paradigm
Andrew S. Keys, center chief technologist at the Marshall Space Flight Center and NASA program manager, said the now-completed project has moved the task of understanding and modeling silicon-germanium technology to a point where NASA engineers can start using it on actual vehicle designs.
"The silicon-germanium extreme environments team was very successful in doing what it set out to do," Keys said. "They advanced the state-of-the-art in analog silicon-germanium technology for space use a crucial step in developing a new paradigm leading to lighter weight and more capable space vehicle designs."
Keys explained that, at best, most electronics conform to military specifications, meaning they function across a temperature range of minus- 55 degrees Celsius to plus-125 degrees Celsius. B
|Contact: John Toon|
Georgia Institute of Technology Research News