Taking advantage of the unique properties of zinc oxide nanowires, researchers have demonstrated a new type of piezoelectric resistive switching device in which the write-read access of memory cells is controlled by electromechanical modulation. Operating on flexible substrates, arrays of these devices could provide a new way to interface the mechanical actions of the biological world to conventional electronic circuitry.
The piezoelectrically modulated resistive memory (PRM) devices take advantage of the fact that the resistance of piezoelectric semiconducting materials such as zinc oxide (ZnO) can be controlled through the application of strain from a mechanical action. The change in resistance can be detected electronically, providing a simple way to obtain an electronic signal from a mechanical action.
"We can provide the interface between biology and electronics," said Zhong Lin Wang, Regents professor in the School of Materials Science and Engineering at the Georgia Institute of Technology. "This technology, which is based on zinc oxide nanowires, allows communication between a mechanical action in the biological world and conventional devices in the electronic world."
The research was reported online June 22 in the journal Nano Letters. The work was sponsored by the Defense Advanced Research Projects Agency (DARPA), the National Science Foundation (NSF), the U.S. Air Force and the U.S. Department of Energy.
In conventional transistors, the flow of current between a source and a drain is controlled by a gate voltage applied to the device. That gate voltage determines whether the device is on or off.
The piezotronic memory devices developed by Wang and graduate student Wenzhuo Wu take advantage of the fact that piezoelectric materials like zinc oxide produce a charge potential when they are mechanically deformed or otherwise put under strain. These PRM devices use the piezoelectric charge created
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Georgia Institute of Technology Research News