Scientists from the University of Pennsylvania have developed nanowires capable of storing computer data for 100,000 years and retrieving that data a thousand times faster than existing portable memory devices such as Flash memory and micro-drives, all using less power and space than current memory technologies.
Ritesh Agarwal, an assistant professor in the Department of Materials Science and Engineering, and colleagues developed a self-assembling nanowire of germanium antimony telluride, a phase-changing material that switches between amorphous and crystalline structures, the key to read/write computer memory. Fabrication of the nanoscale devices, roughly 100 atoms in diameter, was performed without conventional lithography, the blunt, top-down manufacturing process that employs strong chemicals and often produces unusable materials with space, size and efficiency limitations.
Instead, researchers used self-assembly, a process by which chemical reactants crystallize at lower temperatures mediated by nanoscale metal catalysts to spontaneously form nanowires that were 30-50 nanometers in diameter and 10 micrometers in length, and then they fabricated memory devices on silicon substrates.
We measured the resulting nanowires for write-current amplitude, switching speed between amorphous and crystalline phases, long-term durability and data retention time, Agarwal said.
Tests showed extremely low power consumption for data encoding (0.7mW per bit). They also indicated the data writing, erasing and retrieval (50 nanoseconds) to be 1,000 times faster than conventional Flash memory and indicated the device would not lose data even after approximately 100,000 years of use, all with the potential to realize terabit-level nonvolatile memory device density.
This new form of memory has the potential to revolutionize the way we share information, transfer data and even download entertainment as consumers, Agarwal said. This represents a potent
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University of Pennsylvania