Similarly, while individual NEM devices show extremely high performance, it has proven difficult so far to make them operate reliably for millions of cycles, which is necessary if they are to be used in consumer electronics. The review details the various modes of failure and describes promising methods for overcoming them.
An example of the advances that facilitate improved robustness of NEM switch technologies is reported in the current issue of Advanced Materials. Here Espinosa and his group show how novel material selection can greatly improve the robustness of both hybrid NEM-CMOS and standalone NEM devices.
"NEM devices with commonly-used metal electrodes often fail by one of a variety of failure modes after only a few actuation cycles," said Owen Loh, a PhD student at Northwestern University and co-author of the paper, currently at Intel.
Simply by replacing the metal electrodes with electrodes made from conductive diamond-like carbon films, the group was able to dramatically improve the number of cycles these devices endure. Switches that originally failed after fewer than 10 cycles now operated for 1 million cycles without failure. This facile yet effective advance may provide a key step toward realizing the NEM devices whose potential is outlined in the recent review.
The work reported in Advanced Materials was a joint collaboration between Northwestern University, the Center for Integrated Nanotechnologies at Sandia National Laboratories, and the Center for Nanoscale Materials at Argonne Nationa
|Contact: Megan Fellman|