Using such nanomesh as the semiconducting channel, Huang and her team have demonstrated room-temperature transistors that can support currents nearly 100 times greater than individual graphene nanoribbon devices, but with a comparable on-off ratio. The on-off ratio is the ratio between the currents when a device is switched on or switched off. This usually reveals how effectively a transistor can be switched off and on.
The researchers have also shown that the on-off ratio can be tuned by varying the neck width.
"GNMs can address many of the critical challenges facing graphene, as well as bypass the most challenging assembly problems," Huang said. "In conjunction with recent advances in the growth of graphene over a large-area substrate, this concept has the potential to enable a uniform, continuous semiconducting nanomesh thin film that can be used to fabricate integrated devices and circuits with desired device size and driving current.
"The concept of the GNM therefore points to a clear pathway towards practical application of graphene as a semiconductor material for future electronics. The unique structural and electronic characteristics of the GNMs may also open up exciting opportunities in highly sensitive biosensors and a new generation of spintronics, from magnetic sensing to storage," she said.
|Contact: Wileen Wong Kromhout|
University of California - Los Angeles