A paper, "Controlling the influence of Auger recombination on the performance of quantum-dot light-emitting diodes" is being published Oct. 25 in Nature Communications. In addition, an overview article on the field of quantum-dot light-emitting diodes and specifically the role of Auger effects appeared in the September Materials Research Society Bulletin, Volume 38, Issue 09, also authored by researchers of the Los Alamos nanotech team.
Not only has this work identified the mechanism for efficiency losses in QD-LEDs, Klimov said, but it has also demonstrated two different nano-engineering strategies for circumventing the problem in QD-LEDs based on bright quantum dots made of cadmium selenide cores overcoated with cadmium sulfide shells.
The first approach is to reduce the efficiency of Auger recombination itself, which can be done by incorporating a thin layer of cadmium selenide sulfide alloy at the core/shell interface of each quantum dot.
The other approach attacks the problem of charge imbalance by better controlling the flow of extra electrons into the dots themselves. This can be accomplished by coating each dot in a thin layer of zinc cadmium sulfide, which selectively impedes electron injection. According to Jeffrey Pietryga, a chemist in the nanotech team, "This fine tuning of electron and hole injection currents helps maintain the dots in a charge-neutral state and thus prevents activation of Auger recombination."
|Contact: Nancy Ambrosiano|
DOE/Los Alamos National Laboratory