The research was supported by the Interconnect Focus Center, which is one of the Semiconductor Research Corporation/DARPA Focus Centers, and the Nanoelectronics Research Initiative through the INDEX Center.
Murali and collaborators Kevin Brenner, Yinxiao Yang, Thomas Beck and James Meindl studied the electrical properties of graphene layers that had been taken from a block of pure graphite. They believe the attractive properties will ultimately also be measured in graphene fabricated using other techniques, such as growth on silicon carbide, which now produces graphene of lower quality but has the potential for achieving higher quality.
Because graphene can be patterned using conventional microelectronics processes, the transition from copper could be made without integrating a new manufacturing technique into circuit fabrication.
"We are optimistic about being able to use graphene in manufactured systems because researchers can already grow layers of it in the lab," Murali noted. "There will be challenges in integrating graphene with silicon, but those will be overcome. Except for using a different material, everything we would need to produce graphene interconnects is already well known and established."
Experimentally, the researchers began with flakes of multi-layered graphene removed from a graphite block and placed onto an oxidized silicon substrate. They used electron beam lithography to construct four electrode contacts on the graphene, then used lithography to fabricate devices consisting of parallel nanoribbons of widths ranging between 18 and 52 nanometers. The three-dimensional resistivity of the nanoribbons on 18 different devices was then measured using standard analytical techniques at room temperature.
The best of the graphene nanoribbons
|Contact: John Toon|
Georgia Institute of Technology Research News