By fabricating graphene structures atop nanometer-scale "steps" etched into silicon carbide, researchers have for the first time created a substantial electronic bandgap in the material suitable for room-temperature electronics. Use of nanoscale topography to control the properties of graphene could facilitate fabrication of transistors and other devices, potentially opening the door for developing all-carbon integrated circuits.
Researchers have measured a bandgap of approximately 0.5 electron-volts in 1.4-nanometer bent sections of graphene nanoribbons. The development could provide new direction to the field of graphene electronics, which has struggled with the challenge of creating bandgap necessary for operation of electronic devices.
"This is a new way of thinking about how to make high-speed graphene electronics," said Edward Conrad, a professor in the School of Physics at the Georgia Institute of Technology. "We can now look seriously at making fast transistors from graphene. And because our process is scalable, if we can make one transistor, we can potentially make millions of them."
The findings were scheduled to be reported November 18 in the journal Nature Physics. The research, done at the Georgia Institute of Technology in Atlanta and at SOLEIL, the French national synchrotron facility, has been supported by the National Science Foundation' Materials Research Science and Engineering Center (MRSEC) at Georgia Tech, the W.M. Keck Foundation and the Partner University Fund from the Embassy of France.
Researchers don't yet understand why graphene nanoribbons become semiconducting as they bend to enter tiny steps about 20 nanometers deep that are cut into the silicon carbide wafers. But the researchers believe that strain induced as the carbon lattice bends, along with the confinement of electrons, may be factors creating the bandgap. The nanoribbons are composed of two layers of graphene.
|Contact: John Toon|
Georgia Institute of Technology Research News