"Ultimately, this technique may provide a powerful and new avenue for engineering on-chip nanophotonic devices such as lasers, photodetectors, modulators and solar cells," said Chen.
"This is the first bottom-up integration of III-V nanolasers onto silicon chips using a growth process compatible with the CMOS (complementary metal oxide semiconductor) technology now used to make integrated circuits," said Chang-Hasnain. "This research has the potential to catalyze an optoelectronics revolution in computing, communications, displays and optical signal processing. In the future, we expect to improve the characteristics of these lasers and ultimately control them electronically for a powerful marriage between photonic and electronic devices."
|Contact: Sarah Yang|
University of California - Berkeley