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Chemical vapor deposition is typically used to grow such material; under high temperatures the atoms (like carbon for graphene) fall into line and form sheets. But when two such blooms appear and they meet, they don't necessarily line up. Where they merge, they form what are called "grain boundaries," akin to grains in wood that join at awkward angles. (Think of a branch meeting a tree trunk.) Those grain boundaries affect the electrical properties of the merged material.
Zou calculated those properties based on the atomic energies of the elements. In looking at the elemental bonds, the researchers found the expected "dislocations" where the energies force atoms out of their regular patterns. "Where the sheets meet, they cannot have an ideal lattice structure, so they have these stitches, the dislocations. Each grain boundary is just a series of these dislocations," Yakobson said.
It was only coincidence that the dislocations took on dreidel-like shapes for a paper published during Hanukkah, he said.
"We found order in this complexity and chaos, the exact structures that are possible at the grain boundaries and the dislocations types," he said.
The growing molybdenum/sulfur sheets can meet at any angle, and though the sheets are semiconducting, the boundaries between them generally stop electrical signals in their tracks. But at one particular angle -- 60 degrees -- the periodic dislocations are close enough to pass signals on from one to the next along the length of the boundary. "Basically, they're metallic in this direction," Yakobson said.
"So in the middle of these domains of semiconducting material, you have this boundary line that carries current in one direction, like a wire. And it's only a few angstroms wide," he said.
"Metal disulfides may be promising for future electronic devices based on materials with reduced dimensions," Zou said. "It is important to
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| Contact: David Ruth david@rice.edu 713-348-6327 Rice University Source:Eurekalert |