Cascade Microtech Introduces World's First 45 nm-capable DC/RF Parametric Probe Card Solutions, Lowers Cost of...( BEAVERTON Ore. Jan. 29 /- Cascade...)

BEAVERTON, Ore., Jan. 29 /PRNewswire-FirstCall/ -- Cascade Microtech today introduced two new Pyramid(R) parametric probe cards that allow single-pass high performance DC and RF measurements and reduce the cost of parametric production test for semiconductors with advanced processes nodes at 65 nm, 45 nm and beyond. These leading-edge probe cards leverage Cascade Microtech's new Pyramid Plus(TM) parametric probe card manufacturing technology. Pyramid Plus provides greater mechanical performance, lower leakage, low contact resistance and lowest inductance to rapidly deliver the most accurate and reliable measurements of ever-smaller process monitoring test structures.

The exclusive Pyramid Plus membrane manufacturing process enables multiple specification improvements such as state-of-the-art leakage performance, to 1 fA with a 5-second settling time, improved parametric performance, and reliable contact on smaller test pads. Cascade Microtech's membrane technology is unique in its ability to integrate 20 GHz transmission lines and guarded traces to the probe tip, respectively reducing crosstalk and improving settling time.

"As silicon technologies shrink, process monitoring test structures located in the scribe lines are creating electrical and mechanical challenges," said Geoff Wild, chief executive officer, Cascade Microtech. "It is harder than ever to accurately and reliably probe smaller pads on silicon wafers during yield monitoring, process control monitoring and wafer acceptance testing with existing needle technology. Only Cascade Microtech has the exacting technology needed to perform DC and RF measurements on these new test elements."

As chip geometries decrease and process complexities increase, the difficulties of measuring key parametric indicators include smaller DC currents, lower leakages, and tighter interconnection geometries. In addition, RF techniques are becoming critical production tests to measure RF passive compone
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