SAN JOSE, California, and BELLINGHAM, Washington, USA (PRWEB) March 05, 2013
Last week’s SPIE Advanced Lithography was a success in both quality of papers and numbers of attendees , with attendance at 2,230 and important progress reports on extreme ultraviolet (EUV) lithography, directed self-assembly (DSA), metrology, and related topics. The event ran 24-28 February in San Jose, California.
“There was much discussion about the continuation of Moore's Law, both in terms of the technical ability to shrink as well as the cost,” said symposium chair Harry Levinson (GLOBALFOUNDRIES). “Achievement of a significant milestone for EUV sources that should enable more rapid progress in EUV lithography was reported, as was the potential for a EUV pellicle -- a welcomed prospect. And EUV extension to higher resolution, where we face many challenges, was the subject of many papers.”
On Thursday morning, Cymer announced that they had met “key milestones” in recent tests of their EUV technology in an ASML lithography scanner.
David Brandt, Cymer’s Senior Director of EUV Marketing, reported new results for EUV power output as a light source for lithography, including a key announcement of 40 watts of EUV light in continuous operation using MOPA Prepulse technology. Hear more in the SPIE Newsroom video interview.
“In addition to the good news of EUV source power achievements, there were first signs of considerations for EUV adoption in high volume, coming from infrastructure development such as EUV mask actinic inspection, EUV mask OPC, and EUV lithography integration in a full CMOS flow with yield-defectivity investigations,” said symposium co-chair Mircea Dusa (ASML US).
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